Nambari ya Bidhaa ya Mtengenezaji:
IPI052NE7N3 G
Product Overview
Mtengenezaji:
Infineon Technologies
Nambari ya Kipande:
IPI052NE7N3 G-DG
Maelezo:
MOSFET N-CH 75V 80A TO262-3
Maelezo ya Kina:
N-Channel 75 V 80A (Tc) 150W (Tc) Through Hole PG-TO262-3
Hesabu:
12801027
Omba Nukuu
Kiasi
Kiasi cha chini 1
Kiasi cha chini 1
J5fV
(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24
Tutakurudishia jibu ndani ya masaa 24
TUMA
IPI052NE7N3 G Maalum ya Kiufundi
Kikundi
FETs, MOSFETs, FET moja, MOSFETs
Mtengenezaji
Infineon Technologies
Ufungashaji
-
Mfululizo
OptiMOS™
Hali ya Bidhaa
Obsolete
Aina ya FET
N-Channel
Teknolojia
MOSFET (Metal Oxide)
Drain kwa Voltage ya Chanzo (Vdss)
75 V
Sasa - Drain inayoendelea (id) @ 25 ° C
80A (Tc)
Voltage ya Hifadhi (Max Rds On, Min Rds On)
10V
Rds Kwenye (Max) @ Id, Vgs
5.2mOhm @ 80A, 10V
Vgs(th) (Max) @ Id
3.8V @ 91µA
Malipo ya lango (Qg) (Max) @ Vgs
68 nC @ 10 V
Vgs (Max)
±20V
Uwezo wa kuingiza (Ciss) (Max) @ Vds
4750 pF @ 37.5 V
Kipengele cha FET
-
Usambazaji wa Nguvu (Max)
150W (Tc)
Joto la Uendeshaji
-55°C ~ 175°C (TJ)
Aina ya Kuweka
Through Hole
Kifurushi cha Kifaa cha Muuzaji
PG-TO262-3
Kifurushi / Kesi
TO-262-3 Long Leads, I2PAK, TO-262AA
Nambari ya Bidhaa ya Msingi
IPI052N
Karatasi za Takwimu na Nyaraka
Mchoro wa HTML
Jarida la Takwimu
Taarifa za Ziada
Kifurushi cha Kawaida
500
Majina mengine
IPI052NE7N3G
IPI052NE7N3 G-DG
Uainishaji wa Mazingira na Usafirishaji
Kiwango cha Usikivu wa Moisture (MSL)
1 (Unlimited)
Hali ya REACH
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Digi Cheti
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